Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm
By J. Moon, D. Curtis, S. Bui, M. Hu, D. Gaskill, J. Tedesco, P. Asbeck, G. Jernigan, B. Vanmil, R. Myers-Ward and 3 more. IEEE Electron Device Letters, 2010
140 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/be6c34b8b7eeed55a2e0e0d575b3ac6ed09694b0
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Citations in the corpus
- Graphene-Based Ambipolar RF Mixers (2010, background): “2 to 181 mS/mm, which can be achieved through using thinner gate dielectrics and material with higher mobility [11].”
- High transconductance organic electrochemical transistors (2013, unknown): “1 4 1,400 28 350 Graphene27, (28,29) SiO2 (BG); Y2O3 (TG) 2.”