Resistive switching in metal–ferroelectric–metal junctions

By J. R. Contreras, H. Kohlstedt, U. Poppe, Rainer Waser, C. Buchal, N. Pertsev. 2003

279 citations recorded by the source corpus.

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

Spintronics: A contemporary review of emerging electronics devices (2016, background): “The concept of FTJ was proposed by Esaki early in 1971 [46] but the fabrication was achieved recently [47], because it is a challenging task to retain stable ferroelectric polarization on ultra-thin layer that is made of few unit cells.”
Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications (2005, background): “Since the early 1960s, the resistance switching behaviors of various oxides such as Nb O [7], [8], TiO [9], NiO [10], Al O [11] and ferroelectrics oxide [12] have been investigated.”
Physics of thin-film ferroelectric oxides (2005, background): “…biased in one direction, whereas for the opposite bias Schottky injection dominates. e. Ultra-Thin Films - Direct Tunneling Very recently Rodriguez Contreras et al. (2003) have succeeded in producing metal-PZT-metal junctions sufficiently thin (6nm) that it appears that direct tunneling or phonon…”
Towards Oxide Electronics: a Roadmap (2019, background): “48O3 sandwiched between SrRuO3 and Pt, with resistance contrasts of 400% at room temperature [314].”
Ferroelectric tunnel junctions for information storage and processing (2014, methodology): “First experiments performed in Ju¨lich resulted in the demonstration of resistive switching of 400% at room temperature in junctions based on ultrathin ﬁlms of PbZr 0.52 Ti 0.48 O 3 sandwiched between SrRuO 3 and Pt 28 .”