Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics.
By C. Berger, Zhimin Song, Tianbo Li, Xuebin Li, A. Ogbazghi, R. Feng, Z. Dai, A. Marchenkov, E. Conrad, P. First and 1 more. 2004
3,265 citations recorded by the source corpus.
We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically three graphene sheets, were grown by thermal decomposition on the (0001) surface of 6H−SiC, and characterized by surface science techniques. The low-temperature conductance spans a range of localization regimes according to the structural state (square resistance 1.5 kΩ to 225 kΩ at 4 K, with positive magnetoconductance). Low-resistance samples show characteristics of weak localization in two dimensions, from which we estimate elastic and inelastic mean free paths. At low field, the Hall resistance is linear up to 4.5 T, which is well-explained by n-type carriers of density 1012 cm-2 per graphene sheet. The most highly ordered sample exhibits Shubnikov−de Haas oscillations that correspond to nonlinearities observed in the Hall resistance, indicating a potential new quantum Hall system. We show that the high-mobility films can be patterned via conventional lithographic...
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/644710beb273aed55887bd0dc3f8043be8b5124d
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Atomic and Molecular Physics, and Optics
- K. Novoselov
- N. M. R. Peres
- Francisco Guinea
- E. Hwang
- M. Goerbig
- S. Adam
- A. C. Castro Neto
- A.K. Geim
In Materials Chemistry
- K. Novoselov
- N. M. R. Peres
- Hui‐Ming Cheng
- Francisco Guinea
- A.K. Geim
- M. Goerbig
- E. Hwang
- A. C. Castro Neto
Citations in the corpus
- Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs (2008, background): “Electrons in graphene behave as massless fermions and travel through the lattice with long mean free path, as shown by the high mobility [5]–[7].”
- Epitaxial Graphene on SiC: A Review of Growth and Characterization (2016, methodology): “Graphene grown in this manner is referred to as “epitaxial graphene” [31].”
- Outstanding strength, optical characteristics and thermal conductivity of graphene-like BC3 and BC6N semiconductors (2019, background): “its remarkable mechanical properties [3] and ultrahigh thermal conductivity [4, 5, 6] outperforming all known materials. Graphene also presents highly promising optical and electronic characteristics [7, 8, 9, 10]. The exceptional properties of graphene not only propose this novel material for the d”
- Graphene and derivatives – Synthesis techniques, properties and their energy applications (2017, positive): “Graphene can be used in gas detection, composites, energy storage devices [4-7] and transistors [8].”
- Electronic transport in two-dimensional graphene (2010, background): “…is “epitaxial graphene” manufactured by heating SiC wafers, causing the Si atoms to desorb, resulting in several graphene layers at the surface (Berger et al., 2004, 2006; de Heer et al., 2010; Emtsev et al., 2009; First et al., 2010) that are believed to be very weakly coupled and of very…”