Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

By Ming-Yang Li, Yumeng Shi, Chia-Chin Cheng, Li‐Syuan Lu, Yung‐Chang Lin, Haoqi Tang, M. Tsai, Chih-Wei Chu, K. Wei, Jr-hau He and 3 more. Science, 2015

1,095 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a65885bf4b606ee2cb23c0f8aafe2abe16563a9d

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. K. Novoselov
2. Hua Zhang
3. A. C. Castro Neto
4. Fengnian Xia
5. N. M. R. Peres
6. A.K. Geim
7. M. Goerbig
8. Andrea C. Ferrari

In Materials Chemistry

1. K. Novoselov
2. A. C. Castro Neto
3. Fengnian Xia
4. Hua Zhang
5. Han Wang
6. A. Mishchenko
7. N. M. R. Peres
8. A. Carvalho

Citations in the corpus

• 2D materials and van der Waals heterostructures (2016, methodology): “To avoid alloying during growth, two separate temperature regimes were used (138).”
• Ultrathin Two-Dimensional Nanomaterials. (2015, background): “177,179,180 Type III is based on the vertical growth of aligned ultrathin 2D nanosheet arrays on another ultrathin 2D nano-material substrate to form hierarchical heterostructures.”