Reproducible switching effect in thin oxide films for memory applications

By A. Beck, J. Bednorz, C. Gerber, C. Rossel, D. Widmer. 2000

1,085 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/ffe29dd194fe3ba7fa9199d0fa4c7675355b039e

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Daniele Ielmini
2. H. Philip Wong
3. Abu Sebastian
4. M. Le Gallo
5. Shimeng Yu
6. M. Di Ventra
7. Michael N. Kozicki
8. Dmitri B. Strukov

In Materials Chemistry

1. H. Philip Wong
2. Daniele Ielmini
3. Abu Sebastian
4. Geoffrey W. Burr
5. Chung Hon Lam
6. M. Le Gallo
7. Bülent N. Kurdi
8. Rohit S. Shenoy

Citations in the corpus

• Bipolar and Unipolar Resistive Switching in Cu-Doped $ \hbox{SiO}_{2}$ (2007, background): “with the same voltage polarity, but in the case of SrZrO3, bipolar switching has also been reported [5].”
• A Versatile Memristor Model With Nonlinear Dopant Kinetics (2011, background): “Memristive behavior has, in fact, existed for many years [3]–[5], but the phenomenon was not properly deciphered”
• Memory devices and applications for in-memory computing (2020, background): “NaTuRe NaNoTecHNology This non-volatile accumulative behaviour, in spite of its nonlinear and stochastic nature, can be exploited in several applications, such as training deep neural networks, where the conductance values need to be incrementally modified.”