Atomic layer deposition (ALD): from precursors to thin film structures
By Markku Leskelä, Mikko Ritala. 2002
1,084 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/fe6b67da671b73a79fbfe4197c1ad5b38637d945
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In Electrical and Electronic Engineering
- Yousung Jung
- Uwe Schroeder
- Thomas Mikolajick
- S. George
- Dae Yang Oh
- I. Fina
- Dong Hyeon Kim
- Jin Wook Kim
In Materials Chemistry
- Uwe Schroeder
- Thomas Mikolajick
- Yousung Jung
- S. George
- Dae Yang Oh
- Vincent Garcia
- Manuel Bibes
- Dong Hyeon Kim
Citations in the corpus
- Enhanced Stability of LiCoO2 Cathodes in Lithium-ion Batteries Using Surface Modification by Atomic Layer Deposition (2010, background): “0 Torr, (8) H 2 O reaction time; (9) evacuation of reaction products and excess H 2 O; (10) dose N 2 ; (11) N 2 static time; and (12) evacuation of N 2 and any entrained gases.”
- Surface chemistry of LiNi0.5Mn1.5O4 particles coated by Al2O3 using atomic layer deposition for lithium-ion batteries (2015, methodology): “The first ALE system developed was ZnS.[49] Specially, Atomic Layer Deposition has used manly the semiconductor industry which needs thin film and precise control such as high dielectric constant gate in the”
- Towards Oxide Electronics: a Roadmap (2019, background): “The precursors react with the surface species in a self-limiting way, which leads to formation of a film with thickness of a fraction of one atomic layer after each ALD cycle, the growth per cycle depending on the steric hindrance of the precursor molecules and the availability of the reactive surfa”