Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire

By M. Craven, S. H. Lim, Feng Wu, J. Speck, Steven P. DenBaars. 2002

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Research challenges to ultra‐efficient inorganic solid‐state lighting (2007, background): “However, early attempts to achieve non-polar GaN by growth on foreign substrates, such as a-plane GaN on r-plane sapphire, resulted in unacceptably high densities of extended defects such as TDs and stacking faults [18].”
MicroLED technologies and applications: characteristics, fabrication, progress, and challenges (2020, unknown): “Therefore, the wavelength stability and efficiency droop for nonpolar and semipolar LEDs have been improved considerably, desirable for microLED applications [52, 53].”
Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells (2009, unknown): “GaN, InGaN/GaN MQW, and LED structures with nonpolar and semipolar orientations of the wurtzite crystals has been explored by the growth of III-N films on various foreign substrates such as (1 1 −2 0) a-plane GaN on a-plane SiC [87] and on (1 0 −1 1) r-plane sapphire [88], and a-plane LED on r-plane”