Recent advances in Schottky barrier concepts

By R. T. Tung. 2001

1,069 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/fa61eb71252c0af7a024d6cc3d38c6ac71dea250

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. A. Bargerbos
2. D. Moran
3. David A. MacDonald
4. Isha Maini
5. A. Antipov
6. Bela Bauer
7. Kevin G. Crawford
8. G. Winkler

In Electrical and Electronic Engineering

1. D. Moran
2. David A. MacDonald
3. Isha Maini
4. Kevin G. Crawford
5. S. Tongay
6. E. Rossi
7. A. Hebard

Citations in the corpus

• Surface transfer doping of diamond: A review (2021, methodology): “For instance, at the metalsemiconductor interface energy bands are assumed to have a discontinuous long-range order, however a more microscopic view shows that the rapidly varying short-range crystal potential remains continuous, to satisfy Poisson’s equation [237,242].”
• Effects of Gate-Induced Electric Fields on Semiconductor Majorana Nanowires (2018, background): “[70] Raymond T Tung, “Recent advances in Schottky barrier concepts,” Mater Sci Eng R Rep.”
• Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes (2011, background): “Ideality values greater than one (unity) have been attributed to (1) an image-force-lowering correction to the SBH, (2) a bias-dependent SBH, and (3) the existence of additional current processes such as thermionic-field emission across the metal/semiconductor interface [20].”