Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes
By S. Tongay, Maxime G. Lemaitre, Xiaochang Miao, B. Gila, B. Appleton, A. Hebard. 2011
232 citations recorded by the source corpus.
Diodes based on metal-semiconductor interfaces are common place in semiconductor electronics. What happens when the normal metal is replaced by monolayer graphene? A group of physicists at University of Florida experimentally demonstrate that graphene-semiconductor interfaces make interesting diodes for a surprisingly wide variety of semiconductors.
Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/b0bfe693d0ea695e5b23e8bd99628b69485d0053
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In Atomic and Molecular Physics, and Optics
In Biomedical Engineering
In Materials Chemistry
Citations in the corpus
- Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction (2015, background): “2 /cm A at -5V), lower than the previously reported values [140] and [151], were achieved, confirming the good fabrication process.”
- Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect (2017, methodology): “ current is often measured [1,24]. The anomaly of the reverse saturation current has been explained by the modulation of the Schottky barrier height due to the low density of states (DOS) of graphene [16,25]. Other inconsistencies with the standard Schottky diode model, as the lower value of the eff”