Effects of Gate-Induced Electric Fields on Semiconductor Majorana Nanowires

By A. Antipov, A. Bargerbos, G. Winkler, Bela Bauer, E. Rossi, R. Lutchyn. Physical Review X, 2018

143 citations recorded by the source corpus.

We study the effect of gate-induced electric fields on the properties of semiconductor-superconductor hybrid nanowires which represent a promising platform for realizing topological superconductivity and Majorana zero modes. Using a self-consistent Schrodinger-Poisson approach that describes the semiconductor and the superconductor on equal footing, we are able to access the strong tunneling regime and identify the impact of an applied gate voltage on the coupling between semiconductor and superconductor. We discuss how physical parameters such as the induced superconducting gap and Lande g-factor in the semiconductor are modified by redistributing the density of states across the interface upon application of an external gate voltage. Finally, we map out the topological phase diagram as a function of magnetic field and gate voltage for InAs/Al nanowires.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/ac726d5b65c17f2ee1871eef2b29a8fddbd88565

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. C. Nayak
2. P. Caroff
3. Bela Bauer
4. P. Krogstrup
5. B. Nijholt
6. S. Teicher
7. Michael Manfra
8. A. Antipov

In Materials Chemistry

1. P. Caroff
2. C. Nayak
3. B. Nijholt
4. R. Lutchyn

Citations in the corpus

• InAs-Al hybrid devices passing the topological gap protocol (2022, background): “By performing self-consistent simulations [58, 59], we find the disorder potential underneath the Al.”