Giant tunneling magnetoresistance up to 410% at room temperature in fully epitaxial Co∕MgO∕Co magnetic tunnel junctions with bcc Co(001) electrodes
By Shinji Yuasa, Akio Fukushima, H. Kubota, Yoshishige Suzuki, K. Ando. 2006
343 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics
View Paper: https://www.semanticscholar.org/paper/f9df1ce5b9003e306948294c36cd399c780e5004
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In Atomic and Molecular Physics, and Optics
- Weisheng Zhao
- M. Chshiev
- Claude Chappert
- Fumihiro Matsukura
- Bernard Dieny
- A. Barthélémy
- Shoji Ikeda
- Manuel Bibes
In Condensed Matter Physics
Citations in the corpus
- High Speed, High Stability and Low Power Sensing Amplifier for MTJ/CMOS Hybrid Logic Circuits (2009, methodology): “MRAM, MgO is used for the tunnel barrier [4], [5] and the TMR rises up to 200% for RA between 10 and 60 .”
- Oxide Spintronics (2007, background): “TMR values of as high a 400% [24] at 300 K.”
- Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications (2017, background): “In contrast, in Co=MgO=Co, TMR drops only by 30% (Yuasa et al., 2006).”
- Magnetic Tunnel Junctions for Spintronic Memories and Beyond (2007, background): “[60]–[62], and of 220% in highly oriented (001) CoFe/MgO/”