A novel Si tunnel FET with 36mV/dec subthreshold slope based on junction depleted-modulation through striped gate configuration
By Qianqian Huang, Ru Huang, Zhan Zhan, Y. Qiu, Wenzhe Jiang, Chunlei Wu, Yangyuan Wang. International Electron Devices Meeting, 2012
133 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/f9d02d10c98ef9f66623eb7a88233b6276de9116
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In Electrical and Electronic Engineering
Citations in the corpus
- Tunnel Field-Effect Transistors: State-of-the-Art (2014, result): “Consistent with theoretical predictions, experimental Si TFETs [25]–[30] generally display lower ON-currents.”