Theory of voltage-driven current and torque in magnetic tunnel junctions

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Quantitative measurement of voltage dependence of spin-transfer torque in MgO-based magnetic tunnel junctions (2008, unknown): “Yet, such measurements are crucial to refining our understanding of the mechanisms responsible and the theories that describe the”
Bias-driven high-power microwave emission from MgO-based tunnel magnetoresistance devices (2008, background): “Indeed, recent theoretical models suggested that spin-transfer effects in MTJs might show different trends compared with metallic pillars, in terms of bias-voltage dependence and relative importance of the perpendicular and in-plane ( T p ) spin-torque terms, where the torque direction is giv”
Measurement of the spin-transfer-torque vector in magnetic tunnel junctions (2007, background): “[18] provides a means to analyze these results.”
Basic principles of STT-MRAM cell operation in memory arrays (2013, background): “This observation is consistent with theoretical models, which relate the asymmetrical bias dependence of the STT to the bias dependence of the tunnelling conductances for the spin channels [50, 51, 61].”