Bias-driven high-power microwave emission from MgO-based tunnel magnetoresistance devices
By A. Deac, Akio Fukushima, H. Kubota, H. Maehara, Yoshishige Suzuki, Shinji Yuasa, Y. Nagamine, K. Tsunekawa, D. Djayaprawira, N. Watanabe. 2008
406 citations recorded by the source corpus.
Spin-momentum transfer between a spin-polarized current and a ferromagnetic layer can induce steady-state magnetization precession, and has recently been proposed as a working principle for ubiquitous radio-frequency devices for radar and telecommunication applications. However, so far, the development of industrially attractive prototypes has been hampered by the inability to identify systems that can provide enough power. Here, we demonstrate that microwave signals with device-compatible output power levels can be generated from a single magnetic tunnel junction with a lateral size of 100 nm, seven orders of magnitude smaller than conventional radio-frequency oscillators. We find that in MgO magnetic tunnel junctions the perpendicular torque induced by the spin-polarized current on the local magnetization can reach 25% of the in-plane spin-torque term, although showing a different bias dependence. Both findings contrast with the results obtained on all-metallic structures, previously investigated, reflecting the fundamentally different transport mechanisms in the two types of structure. Improvements in the microwave output efficiency of MgO-based magnetic tunnel junctions brings them a step closer to practical applications and enables greater insight into the physics of spin transfer in such devices.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/f272b5a9b264ab903c2299dd342c2b5e19a814e2
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In Atomic and Molecular Physics, and Optics
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In Condensed Matter Physics
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In Materials Chemistry
Citations in the corpus
- Spin-Torque and Spin-Hall Nano-Oscillators (2015, background): “As the TMR effect is much larger than the GMR effect in all-metallic PSVs, MTJs are becoming standard in most nanopillar devices [84].”
- Magnetization oscillations and waves driven by pure spin currents (2016, background): “This effect was measured directly by noise spectroscopy in magnetic tunnel junctions, taking advantage of their large magnetoresistance [103-105].”
- Nonlinear Auto-Oscillator Theory of Microwave Generation by Spin-Polarized Current (2009, background): “Recently, a high-power microwave oscillations in MTJ devices have been observed in [41], [42].”
- Spintronics (2015, methodology): “Due to its high compactness, extremely wide tenability, and compatibility with standard CMOS processes, STO has the potential to be an agile radio frequency (RF) oscillator in wireless communication systems [Deac et al. 2008; Villard et al. 2010], as shown in Figure 28.”