Room-temperature ballistic transport in narrow graphene strips
By D. Gunlycke, H. M. Lawler, C. T. White. 2006
182 citations recorded by the source corpus.
We investigate electron-phonon couplings, scattering rates, and mean free paths in zigzag-edge graphene strips with widths of the order of $10\phantom{\rule{0.3em}{0ex}}\mathrm{nm}$. Our calculations for these graphene nanostrips show both the expected similarity with single-wall carbon nanotubes (SWNTs) and the suppression of the electron-phonon scattering due to a Dirichlet boundary condition that prohibits one major backscattering channel present in SWNTs. Low-energy acoustic phonon scattering is exponentially small at room temperature due to the large phonon wave vector required for backscattering. We find within our model that the electron-phonon mean free path is proportional to the width of the nanostrip and is approximately $70\phantom{\rule{0.3em}{0ex}}\ensuremath{\mu}\mathrm{m}$ for an $11\text{\ensuremath{-}}\mathrm{nm}$-wide nanostrip.
Subfields: Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/f55f9182b6d3fb01b4ceabbc4561ae1a1ab95151
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In Materials Chemistry
Citations in the corpus
- Compact Physics-Based Circuit Models for Graphene Nanoribbon Interconnects (2009, background): “The low-bias MFP corresponding to electron–phonon scatterings in GNRs is expected to be extremely large (i.e., tens of micrometers) [ 25 ].”
- Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status, and Prospects (2009, background): “In addition, CNT and GNR are found to have long mean free paths (MFPs) at low bias due to weak acoustic phonon scattering and suppressed optical phonon scattering at room temperature [43], [49].”
- Scaling Behaviors of Graphene Nanoribbon FETs: A Three-Dimensional Quantum Simulation Study (2007, methodology): “The dc characteristics of GNRFETs are simulated by selfconsistently solving the Schrodinger equation using the NEGF formalism with a 3-D Poisson equation [12]. Ballistic transport is assumed [ 13 ].”
- Production, properties and potential of graphene (2010, background): “In addition, the mobility remains high even at the highest electric-field-induced carrier concentrations, and seems to be little affected by chemical doping,[147] suggesting the possibility of achieving ballistic transport regime on a submicrometer scale at 300 K.[148] Moreover, experimentally measu”