Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

By M. Radosavljevic, G. Dewey, D. Basu, J. Boardman, B. Chu-Kung, J. Fastenau, S. Kabehie, J. Kavalieros, V. Le, W. K. Liu and 10 more. International Electron Devices Meeting, 2011

136 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/ef45bcdace0739776e91c99fbb7295aed5116963

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In Electrical and Electronic Engineering

1. Kelin J. Kuhn
2. Bevan M. Baas
3. Aaron Stillmaker
4. Qiang Li
5. Kei May Lau

In Materials Chemistry

1. Kelin J. Kuhn

Citations in the corpus

• Considerations for Ultimate CMOS Scaling (2012, methodology): “TriGate InGaAs device illustrating DIBL improvement as a function of Leff and Wsi compared to an ETSOI InGaAs device [188].”