High-performance MoS2 transistors with low-resistance molybdenum contacts

By Jiahao Kang, Wei David Liu, Kaustav Banerjee. 2014

359 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/e596ba06688592c8f8ccd126a2597566597a9764

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Wei David Liu
2. Kaustav Banerjee
3. Jiahao Kang
4. Deblina Sarkar
5. Wei Cao
6. Sanjay Kumar Banerjee
7. Debdeep Jena
8. Hong Li

In Materials Chemistry

1. Kaustav Banerjee
2. Jiahao Kang
3. Wei David Liu
4. Wei Cao
5. Sanjay Kumar Banerjee
6. Debdeep Jena
7. Hema C. P. Movva
8. Amritesh Rai

Citations in the corpus

• Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor (2018, methodology): “3 eV), it has a high degree of “atomic d orbital overlapping” with the underlying MoS2 which results in an intimate top contact [284].”
• Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors (2014, background): “031005-6”
• A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect (2014, methodology): “8 k ·μm for few-layer MoS2 FETs [8]) by effectively metalizing the TMD underneath with selected metals that can form overlapped d-orbitals with TMD, so that the Schottky and tunnel barriers vanish [11], [24], the resistances in the S/D extensions between gate and contact remain high.”