Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures

By M. Endo, S. Kanai, S. Ikeda, Fumihiro Matsukura, Hideo Ohno. 2010

430 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Mechanical Engineering

View Paper: https://www.semanticscholar.org/paper/e2bee61f94fae44350233b6553af919924c22d44

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Hideo Ohno
2. Fumihiro Matsukura
3. Juan G. Alzate
4. Kang L. Wang
5. P. Amiri
6. M. Chshiev
7. Bernard Dieny
8. Shoji Ikeda

In Electronic, Optical and Magnetic Materials

1. Hideo Ohno
2. Juan G. Alzate
3. Kang L. Wang
4. P. Amiri
5. Fumihiro Matsukura
6. Shoji Ikeda
7. Bernard Dieny
8. M. Chshiev

In Mechanical Engineering

1. M. Chshiev
2. Bernard Dieny

Citations in the corpus

• Low-power non-volatile spintronic memory: STT-RAM and beyond (2013, background): “Enhancement of the magnetoelectric coefficient has been demonstrated by stacking MgO next to a high-k dielectric [51, 52].”
• A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction. (2010, background): “The bulk contribution is consistent with the demagnetization ( − M S μ 0 ), indicating that K b is negligible, that is, that the perpendicular anisotropy in this system is entirely due to the CoFeB– MgO interfacial anisotrop”
• Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications (2017, background): “39), with a change of −23 μJ=m2 for 7.0 MV=cm, which corresponds to ∼33 μJ=m2 for 1 V=nm (Endo et al., 2010).”