70% TMR at room temperature for SDT sandwich junctions with CoFeB as free and reference Layers

By Dexin Wang, C. Nordman, J. Daughton, Z. Qian, J. Fink. IEEE transactions on magnetics, 2004

300 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/e1bb6e9e02410a99baff47974e2233189bbaeb81

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. D. Ralph
2. Robert A. Buhrman
3. E. Ryan
4. S. Kiselev
5. I. Krivorotov
6. Jordan A. Katine
7. Patrick M. Braganca
8. William J. Gallagher

In Electrical and Electronic Engineering

1. D. Ralph
2. Robert A. Buhrman
3. Stuart S. P. Parkin
4. Axel Hoffmann
5. J. Sinova
6. T. Jungwirth

In Electronic, Optical and Magnetic Materials

1. D. Ralph
2. Stuart S. P. Parkin

Citations in the corpus

• Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip (2006, methodology): “Later, magnetic tunnel junctions with Al2O3 barriers and CoFeB free-layer electrodes were further optimized by others to produce TMR values of ;70% [42, 43].”
• Magnetic Tunnel Junctions for Spintronic Memories and Beyond (2007, unknown): “Employing a double-barrier structure has also been shown effective in increasing ∆V [76].”
• Spin-transfer effects in nanoscale magnetic tunnel junctions (2004, methodology): “If the prediction that Ic,o in MTJs decreases with increasing TMR [20], and if MTJs with much higher TMR and sufficiently low RA can be engineered, then the possibility is open for much lower critical current densities.”