Thermally activated trap charges responsible for hysteresis in multilayer MoS2 field-effect transistors

By Youngseo Park, H. Baac, J. Heo, G. Yoo. 2016

155 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d83c5ca6b670a918be8e25a96f3301a1fa6a61df

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Mengwei Si
2. Wenzhuo Wu
3. Peide D. Ye

In Materials Chemistry

1. Mengwei Si
2. Wenzhuo Wu
3. Peide D. Ye
4. Peter Bøggild

Citations in the corpus

• A ferroelectric semiconductor field-effect transistor (2018, background): “Discussions on the accuracy of field-effect mobility The field effect mobility (μFE) is a defined as (3), μFE = Lgm WCoxVDS (1) gm = dID dVGS (2) The transconductance (gm) is usually extracted from the transfer (ID-VGS) characteristics of the devices.”
• Reversible hysteresis inversion in MoS2 field effect transistors (2017, methodology): “7b).(22) Trap density extracted at room temperature was normalized with MoS2 flake thickness to give the total intrinsic trap density considering that hysteresis at low temperature stems from intrinsic MoS2 traps.”