Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes

By Jiuru Xu, M. Schubert, A. Noemaun, Di Zhu, Jong Kyu Kim, E. Fred Schubert, Min-ho Kim, H. Chung, Sukho Yoon, C. Sone and 1 more. 2009

154 citations recorded by the source corpus.

Blue light-emitting diodes (LEDs) with polarization-matched GaInN/GaInN multi-quantum-well (MQW) active regions are grown by metal-organic vapor-phase epitaxy. The GaInN/GaInN MQW structure reduces the magnitude of polarization sheet charges at heterointerfaces in the active region. The GaInN/GaInN MQW LEDs are shown to have enhanced light-output power, reduced efficiency droop, a lower forward voltage, a smaller diode ideality factor, and decreased wavelength shift, compared with conventional GaInN/GaN MQW LEDs.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d7343c743878705e9864dbf5c92156ac963e1512

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Nelson Tansu
2. Hongping Zhao
3. Guangyu Liu
4. Jing Zhang
5. Y. Ee
6. R. Arif

In Condensed Matter Physics

1. Hongping Zhao
2. Nelson Tansu
3. Guangyu Liu
4. Jing Zhang
5. Y. Ee
6. Xiao-Hang Li
7. H. Tong
8. R. Arif

In Materials Chemistry

1. Nelson Tansu
2. Hongping Zhao

Citations in the corpus

• III-Nitride Photonics (2010, methodology): “Several factors have been suggested as potential reasons affecting the efficiencydroop in LEDs, however two leading theories have arisen, namely 1) carrier leakage process [27]– [30] or/and 2) Auger process in InGaN active region [34], [35].”