Nanolasers Grown on Silicon
By Roger Chen, T. Tran, K. Ng, W. S. Ko, L. Chuang, F. Sedgwick, Connie J. Chang-Hasnain. 2011
503 citations recorded by the source corpus.
We report a completely new growth mode with which single crystalline InGaAs/GaAs nanopillars can be grown directly on silicon substrates at CMOS compatible temperature. Light emitting diodes, photovoltaic device and optically pumped lasers are achieved.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/d4038909b1decb8ae452fd131b191ab4600dd810
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate (2011, background): “, a Si-based laser has been considered the holy grail of Si photonics because (i) it is the most important active photonic device, (ii) the potential market for Si integrated circuits incorporating electrically pumped lasers is very large, and (iii) it is one of the most difficult challenges to real”
- Room-temperature lasing in a single nanowire with quantum dots (2015, background): “To date, there have been several demonstrations of single NW lasers using various bulk material combinations including ZnO[4], III-Nitride[5,6], II-VI[7,8], and III-As,P,Sb-based core-shell structures[9-15] where the lasing wavelength corresponds to the fundamental bandgap energy of the bulk materia”
- Attojoule Optoelectronics for Low-Energy Information Processing and Communications (2016, background): “many promising directions such as nanoneedle and nanocavity growth on silicon for lasers [54], [174] and LEDs (as well as photodetectors) [117], [119], [124], [174], [175] that could”