Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

By Suk Choi, H. Kim, Seong-soo Kim, Jianping Liu, Jeomoh Kim, J. Ryou, R. Dupuis, A. Fischer, F. Ponce. 2010

200 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d581191d00fcaa460e093502235ee6d409cac707

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Nelson Tansu
2. Hongping Zhao
3. Jing Zhang
4. Guangyu Liu
5. R. Arif

In Condensed Matter Physics

1. Hongping Zhao
2. Nelson Tansu
3. Guangyu Liu
4. R. Arif
5. Jing Zhang
6. Y. Ee

In Electrical and Electronic Engineering

1. Hongping Zhao
2. R. Arif
3. Nelson Tansu
4. Jing Zhang
5. Guangyu Liu

Citations in the corpus

• Visible-Light Communications Using a CMOS-Controlled Micro-Light- Emitting-Diode Array (2012, background): “recombination at defect sites at high carrier density [11], leakage of electrons out of the active region of the device [12] and poor”
• Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes (2013, background): “Approaches including the use of polarization matched AlGaInN barrier [18], [33], the novel designs of thick barriers and electron blocking layers [34]–[38] as well as the insertion of thin large bandgap materials as thin barriers [20], [39] were investigated to suppress the polarization field effect”