3D-stackable crossbar resistive memory based on Field Assisted Superlinear Threshold (FAST) selector

By S. Jo, Tanmay Kumar, S. Narayanan, W. Lu, H. Nazarian. 2014 IEEE International Electron Devices Meeting, 2014

158 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d43d9dfb35e3399b0ef8d842381867a50e7dc349

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Shimeng Yu
2. Pai-Yu Chen
3. Evangelos Eleftheriou
4. Abu Sebastian
5. Geoffrey W. Burr
6. Chung Hon Lam
7. Daniele Ielmini
8. H. Philip Wong

In Materials Chemistry

1. Shimeng Yu
2. Pai-Yu Chen
3. Abu Sebastian
4. Geoffrey W. Burr
5. Chung Hon Lam

Citations in the corpus

• Recent Progress in Phase-Change Memory Technology (2016, background): “A new selector based on “multiple filaments” was introduced by Crossbar [117], [118], which offers extremely high contrast between an ultra-low leakage regime and an abrupt switch into a conductive state.”
• Neuro-Inspired Computing With Emerging Nonvolatile Memorys (2018, background): “, FAST selector [92]) may be needed to minimize the leakage current in other unselected rows/columns.”
• Emerging Memory Technologies: Recent Trends and Prospects (2016, background): “Recently, a field-assistedsuperlinear-threshold selector has been reported [36], which shows outstanding nonlinearity (N 10 > 7 ), steep turn-on slope ( 5 < mV/dec) and high current drivability (>5 MA/cm(2)), and the threshold voltage is claimed to be adjustable from .”