Phonons and Electron-Phonon Scattering in Carbon Nanotubes

By H. Suzuura, T. Ando. 2002

568 citations recorded by the source corpus.

View Paper: https://www.semanticscholar.org/paper/d3af2b917f903c9a5029252352d41f5c2a88a3e6

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In Materials Chemistry

Citations in the corpus

Franck–Condon blockade in suspended carbon nanotube quantum dots (2008, background): “The coupling originates from (1) the modified hopping associated with changes in the C–C bond lengths and (2) the deformation potential due to local area variations; the deformation potential coupling constant g D a30 eV is about an order of magnitude larger than the hopping-induced on”
Evaluating the impact of resistance in carbon nanotube bundles for VLSI interconnect using diameter-dependent modeling techniques (2006, background): “Recent experimental evidence and theoretical formulations have demonstrated that λap depends on the diameter of the SWCNT [10], [18], [19].”
Random Strain Fluctuations as Dominant Disorder Source for High-Quality On-Substrate Graphene Devices (2014, background): “[48] H.”
The electronic properties of graphene (2007, background): “Hen e, elasti strains that modify therelative orientation of the atoms also lead to an e e tivegauge eld, whi h a ts on ea h K point separately, as rst dis ussed in relation to arbon nanotubes (Mañes,2007; Suzuura and Ando, 2002b).”
A review on mechanics and mechanical properties of 2D materials—Graphene and beyond (2016, background): “If disorder is applied to graphene, for example in the form of a mechanical strain, the resulting perturbations to the Dirac equations enter in the form of an effective gauge field [211,212], which bears striking similarity to how a vector”
Energy gaps and a zero-field quantum Hall effect in graphene by strain engineering (2009, background): “Note that distortions (4) are purely shear and do not result in any changes in the area of a unit cell, which means that there is no effective electrostatic potential generated by such strain [23].”
Intrinsic and extrinsic performance limits of graphene devices on SiO2. (2007, unknown): “1 × 14 m s , and our experimentally determined slope gives D A e 18 ± 1 eV , in good agreement with theoretica”
Electronic transport in two-dimensional graphene (2010, methodology): “However, as was first pointed out by Suzuura and Ando (2002a), a material defect such as a missing atom would couple the two Dirac cones (and since each cone is located in a different “valley”, this type of interaction is called intervalley scattering).”