Random Strain Fluctuations as Dominant Disorder Source for High-Quality On-Substrate Graphene Devices

By N. J. Couto, Davide Costanzo, S. Engels, Dong‐Keun Ki, Kenji Watanabe, Takashi Taniguchi, Christoph Stampfer, Francisco Guinea, A. Morpurgo. 2014

173 citations recorded by the source corpus.

Futuristic electronic devices will rely on high electron speeds in graphene. A new investigation shows that random strain in the carbon honeycomb lattice limits the speed of electrons.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/3114f0aa165944fd742afafb9fe7b2f9e8fe02a6

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In Atomic and Molecular Physics, and Optics

1. A. Morpurgo
2. Takashi Taniguchi
3. Kin Chung Fong
4. J. Crossno
5. Kenji Watanabe

In Electrical and Electronic Engineering

1. Takashi Taniguchi

In Materials Chemistry

1. L. Levitov
2. A. Morpurgo
3. Takashi Taniguchi
4. Kin Chung Fong
5. J. Crossno
6. Kenji Watanabe
7. K. Novoselov
8. P. Jarillo-Herrero

Citations in the corpus

• Origin and magnitude of 'designer' spin-orbit interaction in graphene on semiconducting transition metal dichalcogenides (2016, methodology): “For the assembly, we employed a commonly used drytransfer technique [35,36].”
• Observation of the Dirac fluid and the breakdown of the Wiedemann-Franz law in graphene (2015, methodology): “At the CNP, the residual charge carrier density nmin can be estimated by extrapolating a linear fit of log(σ) as a function of log(n) out to the minimum conductivity [32].”