Single-layer MoS2 phototransistors.

By Z. Yin, Hai Li, Hong Li, Lin Jiang, Yumeng Shi, Yinghui Sun, Gang Lu, Qing Zhang, Xiaodong Chen, Hua Zhang. ACS Nano, 2012

3,248 citations recorded by the source corpus.

A new phototransistor based on the mechanically exfoliated single-layer MoS(2) nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS(2) phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS(2) phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.

Subfields: Biomedical Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/0dc1c64ecf4a3338ea499395cfab815ff3c5d54e

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Citations in the corpus

From two-dimensional materials to their heterostructures: An electrochemist's perspective (2017, background): “2e) with superb on/off ratios of 107–108 [26,33,34] in comparison to the much lower 100–101 on/off ratios typical for graphene [35], and phototransistors with fast (>50 ms) switching times [36].”