Destructive single-event effects in semiconductor devices and ICs

By F. Sexton. 2003

260 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Hardware and Architecture

View Paper: https://www.semanticscholar.org/paper/bfcbd0d79959c9e6e3e71d7ec9e9254c8b70a580

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. D. Fleetwood
2. Robert C. Baumann
3. Michael Nicolaidis

In Hardware and Architecture

1. Robert C. Baumann
2. Michael Nicolaidis

Citations in the corpus

• Radiation-induced soft errors in advanced semiconductor technologies (2005, background): “There are a plethora of radiation effects in semiconductor devices that vary in magnitude from data disruptions to permanent damage ranging from parametric shifts to complete device failure [1], [2].”
• Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors (2013, background): “Heavy-ion damage includes single-event gate rupture (SEGR) [49], radiation-induced soft breakdown (RSB) [50], radiation-induced leakage current (RILC) [51], microdose effects [52] and long-term reliability degradation [53], as well as transient effects, which are the subject of the next section.”