Fundamental drift of parameters in chalcogenide phase change memory

By I. Karpov, M. Mitra, D. Kau, G. Spadini, Y. Kryukov, V. Karpov. 2007

181 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/bc44dfde6a7228682d1d8e0a2804ed1058b35c60

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. A. Padilla
2. Michele M. Franceschini
3. B. Jackson
4. Bülent N. Kurdi
5. Matthew J. Breitwisch
6. Rohit S. Shenoy
7. Simone Raoux
8. Kailash Gopalakrishnan

In Electronic, Optical and Magnetic Materials

1. Simone Raoux

In Materials Chemistry

1. A. Padilla
2. Michele M. Franceschini
3. B. Jackson
4. Bülent N. Kurdi
5. Matthew J. Breitwisch
6. Rohit S. Shenoy
7. Simone Raoux
8. Kailash Gopalakrishnan

Citations in the corpus

• Phase change memory technology (2010, background): “It is well known that the resistance of cells in the RESET state tends to increase slowly over time, an effect which has been attributed to either mechanical relaxation forced by the reduced density associated with the amorphous state[165, 166], to the formation of electronic traps associated with l”