Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells
By X. Ni, Qian Fan, R. Shimada, Ü. Özgür, Hadis Morkoçb. 2008
221 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/b9d56e37e9b73da43eb498cc0fb7e637aa5fe499
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In Atomic and Molecular Physics, and Optics
In Condensed Matter Physics
In Electrical and Electronic Engineering
Citations in the corpus
- Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes (2013, background): “Various possible explanations were proposed as the mechanism for the efficiency droop in high power nitride LEDs as follows: 1) decreased carrier localization at In-rich regions at high injection densities [1]; 2) carrier leakage [17]–[23]; 3) hole transport impediment and consequent electron leakag”
- LEDs for Solid-State Lighting: Performance Challenges and Recent Advances (2009, methodology): “Various new device designs, including p-type MQW devices with thin barriers or lower bandgap InGaN barriers to promote hole transport [67], as well as n-p-n”
- Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells (2009, background): “into lower QWs resulting in nonuniform carrier distributions between QWs induced by impeded hole transport [70], [71]; and Auger recombination [72]–[74].”