III–nitrides: Growth, characterization, and properties

By S. Jain, Magnus Willander, J. Narayan, R. V. Overstraeten. 2000

1,210 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/b9a1ce1d5833451696048fac0d02555e68bc5973

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Jan Kuzmik
2. Meiyong Liao

In Condensed Matter Physics

1. T. Katona
2. Jan Kuzmik
3. Asif Khan
4. K. Balakrishnan

In Mechanics of Materials

1. Jan Kuzmik

Citations in the corpus

• Power electronics on InAlN/(In)GaN: Prospect for a record performance (2001, background): “In Al N (as a barrier layer) can be grown lattice matched to GaN [6] while In Ga N was chosen as an alternative channel material to GaN with a good prospect for high mobility and/or electron drift velocity [2], [4].”
• Ultraviolet light-emitting diodes based on group three nitrides (2008, background): “Periodic insertion of low-temperature-grown III-nitride layers was shown to effectively reduce the biaxial tensile strain in AlGaN films (this technique has been demonstrated for most III-nitride alloys), thus reducing the crackin”
• InGaN Solar Cells: Present State of the Art and Important Challenges (2012, background): “been spectacular due to their highly attractive inherent properties [3]–[7].”