Organic Materials and Thin‐Film Structures for Cross‐Point Memory Cells Based on Trapping in Metallic Nanoparticles
By L. Bozano, B. W. Kean, M. Beinhoff, K. Carter, P. Rice, J. C. Scott. 2005
341 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics
View Paper: https://www.semanticscholar.org/paper/b6eb7072707d1df725101e60dfe306b0eec54d9f
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- Rainer Waser
- Masakazu Aono
- J. Campbell Scott
- Bülent N. Kurdi
- Rohit S. Shenoy
- Kailash Gopalakrishnan
- Geoffrey W. Burr
- Chung Hon Lam
In Materials Chemistry
- Masakazu Aono
- Rainer Waser
- Bülent N. Kurdi
- Rohit S. Shenoy
- Kailash Gopalakrishnan
- Geoffrey W. Burr
- Chung Hon Lam
In Polymers and Plastics
Citations in the corpus
- Nanoionics-based resistive switching memories. (2007, background): “For example, gold nanoclusters incorporated in either polymeri”
- Overview of candidate device technologies for storage-class memory (2008, background): “The NPs may be in a relatively discrete layer [83] or mixed more uniformly throughout the organic [84].”