Single crystal diamond wafers for high power electronics
By S. Shikata. 2016
172 citations recorded by the source corpus.
Abstract According to international energy proposal, about 25% of the total CO2 reduction should come from “end use efficiency”. Hence, low loss power devices are an important technology for the 21st century. Diamond-based devices have the potential, but this would require fast development in order to contribute to the CO2 reduction plan early in this century. Here, we present a clear target for the RD a killer defect density less than 0.1 cm− 2, resistivity less than 0.005 Ω cm and a size of 4 in. For the final commercialization stage, targets of zero killer defects, resistivity of 0.001 Ω cm and a size of 6 in. are proposed. The challenges and proposal solutions are reviewed for each technology.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/5cd8a7da06963655f3e3e753f9aee2eaa30a2c10
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In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- Diamond power devices: state of the art, modelling, figures of merit and future perspective (2019, background): “Despite its challenges, diamond has distinctive advantages when compared to other UWBG semiconductors, due to its high hole–electron mobility, critical electric field, the highest known thermal conductivity and widest band gap [6, 7].”