MoS2 transistors with 1-nanometer gate lengths
By S. Desai, S. Madhvapathy, A. Sachid, J. Llinas, Qingxiao Wang, G. H. Ahn, G. Pitner, Moon J. Kim, Jeffrey Bokor, Chenming Calvin Hu and 2 more. Science, 2016
1,329 citations recorded by the source corpus.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/b0341e819acf0c1103699503187485d2396a5404
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In Biomedical Engineering
In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS2 field-effect transistors (2018, background): “Since the dielectric constant of h-BN is quite small (ε ≈ 4) compared to other high-k materials such as Al2O3 (ε ≈ 9), HfO2 (ε ≈ 18) or ZrO2 (ε ≈ 25), the small subthreshold swing as well as negligible hysteresis presented in our device is attributed to the clean interfaces without dangling bonds of”
- A microprocessor based on a two-dimensional semiconductor (2016, positive): “Their ultrathin channel thickness provides improved electrostatic gate control and reduced short-channel effects 7,8 , which ultimately results in better geometric scaling behaviour 9,10 and less power consumption.”
- Sub-10 nm fabrication: methods and applications (2021, methodology): “Furthermore, Javey et al applied SWCNT as a gate to achieve a 1 nm channel MoS2 transistor [222].”
- Attosecond optical-field-enhanced carrier injection into the GaAs conduction band (2018, methodology): “The interaction is divided into two delay windows: (1) transient response during the pump–probe overlap, and (2) lasting signal after the pump interaction.”