Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS2 field-effect transistors

By Q. Vu, Sidi Fan, Sang Hyup Lee, Min-Kyu Joo, W. Yu, Young Hee Lee. 2018

162 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/8f947e43ebec33bec706fb220814f1d0927041d0