Measurement of thermal conductivity of silicon dioxide thin films using a 3ω method
By T. Yamane, N. Nagai, S. Katayama, M. Todoki. 2002
352 citations recorded by the source corpus.
Subfields: Civil and Structural Engineering, Materials Chemistry, Mechanical Engineering
View Paper: https://www.semanticscholar.org/paper/aed5f953573376bf17e20cdf3cf4d06f91543328
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In Civil and Structural Engineering
In Materials Chemistry
In Mechanical Engineering
Citations in the corpus
- Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation (2008, background): “An additional surface thermal resistance of 2×10−4K·cm2/W is added to the gate contact in order to account for surface effects at both the silicon-dielectric and dielectric-gate interfaces [53], [54].”
- Thermal transport in amorphous materials: a review (2016, methodology): “15 Silica Yamane et al [124] Thermal 3ω 48–1000 1.”
- Energy dissipation and transport in nanoscale devices (2010, methodology): “Thermal interfaces are most often studied with pump-probe optical techniques such as time-domain thermoreflectance (TDTR), picosecond transient absorption [147–152], or the 3-omega method [153–157].”