III–Nitride UV Devices

By M. Khan, M. Shatalov, H. Maruska, Hong Wang, E. Kuokštis. 2005

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Fully Integrated Single Photon Avalanche Diode Detector in Standard CMOS 0.18- $\mu$m Technology (2008, background): “and size sensitive medical and industrial applications; and 3) time-consuming individualized production/quality control with significantly high cost [14]–[16].”
A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures (2013, neutral): “(Reprinted from Reference [27]).”
Ultraviolet light-emitting diodes based on group three nitrides (2008, methodology): “Further optimization of the AlN-buffer-layer quality by means of PALE enabled improvements in the material quality of the n-AlGaN bottom-cladding layer, as well as the multiple QW layers, and resulted in the first milliwatt level UV-C LEDs (ref”
Ultraviolet Detectors Based on Wide Bandgap Semiconductor Nanowire: A Review (2018, background): “III-nitride compound semiconductors are composed of group III elements (aluminum, gallium, or indium) and the group V element (nitrogen) [2,102,103].”
Application of ultraviolet light-emitting diodes (UV-LEDs) for water disinfection: A review. (2016, methodology): “The most frequently used materials are III-nitride, including gallium nitride (GaN), 59 aluminium gallium nitride (AlGaN), and aluminum nitride (AlN) (Khan et al., 2005).”