Fully Integrated Single Photon Avalanche Diode Detector in Standard CMOS 0.18- $\mu$m Technology
By N. Faramarzpour, M. J. Deen, Shahram Shirani, Q. Fang. IEEE Transactions on Electron Devices, 2008
181 citations recorded by the source corpus.
Subfields: Biophysics, Electrical and Electronic Engineering, Instrumentation
View Paper: https://www.semanticscholar.org/paper/ba85f2a343adf3973f5709793d4695416ddf4ed2
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
- L. Grant
- R. Henderson
- J. Richardson
- E. Webster
Citations in the corpus
- Scaleable Single-Photon Avalanche Diode Structures in Nanometer CMOS Technology (2011, background): “However, as discussed in [ 8 ], this device cannot be scaled much below 5-µm diameter because the p-well regions get so close that the active area of the SPAD is almost fully depleted.”
- SPAD Figures of Merit for Photon-Counting, Photon-Timing, and Imaging Applications: A Review (2016, unknown): “On the contrary, for scaled devices, different structures were proposed: [30], [32], and [33] implemented a standard structure device; [34] and [43] presented a reverse n+/p-well structure.”