A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

By Liwen Sang, Meiyong Liao, Masatomo Sumiya. Italian National Conference on Sensors, 2013

763 citations recorded by the source corpus.

Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D) nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/ae2ea3665a105cc8ac6859ca101e18a23467fd46

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Citations in the corpus

A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon? (2017, methodology): “(2) Si window: After lifting-off and cleaning, a photolithography was used to pattern windows with the sizes of 500 × 500 and 150 × 150 μm(2).”
Progress in semiconductor diamond photodetectors and MEMS sensors (2021, methodology): “To evaluate the performance of a photodetector, one can use the 5S requirement of Sensitivity, high Signal-to-Noise ratio, high spectral Selectivity, high Speed, and high Stability [60,61].”