Experimental demonstration of 100nm channel length In0.53Ga0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and SRAM applications

By S. Mookerjea, D. Mohata, R. Krishnan, Jawar Singh, A. Vallett, A. Ali, Theresa S. Mayer, V. Narayanan, Darrell Schlom, A. Liu and 1 more. International Electron Devices Meeting, 2009

143 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/a711afefd6f0d2f38c885066dcdcfa4ba620ab9a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Siyu Koswatta
2. Wilfried E. Haensch
3. Steven J. Koester
4. Hao Lu
5. Alan C. Seabaugh

Citations in the corpus

• Tunnel Field-Effect Transistors: State-of-the-Art (2014, background): “The most stable and substantial measurements showing sub-60-mV/decade swing are given for Si in [26], [29], [31] and for InGaAs in [47].”
• On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors (2010, background): “R ESEARCH on tunneling field-effect transistors (TFETs) has been resurgent in recent years because of the potential of TFETs to reduce power dissipation in integrated circuits [1]– [14].”