Process-dependent thin-film thermal conductivities for thermal CMOS MEMS

By M. Arx, Oliver Paul, H. Baltes. Journal of microelectromechanical systems, 2000

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THERMAL CONDUCTIVITY OF DOPED POLYSILICON LAYERS (2001, background): “The highest thermal conductivity reported before the present work was 37.3 W/m K [ 4 ] for a layer of thickness 275 nm, which is thinner than the layers of the present study with thickness 1 m. The phonon mean free path is smaller in the thinner layer in part because of the increased scattering on l”
Electrothermal properties and modeling of polysilicon microthermal actuators (2003, background): “It has also been concluded that grain size within polysilicon contributes to thermal conductivity [ 22 ].”
Tungsten-Based SOI Microhotplates for Smart Gas Sensors (2008, background): “deposition nitrides that are used for passivation and moisture protection in CMOS can have thermal conductivities of less than 3 W/m · K [43]—a very large difference of a factor of”
Scaling analysis of multilevel interconnect temperatures for high-performance ICs (2005, background): “The background scattering of the electrons by phonons, electrons and defects (impurities) that contributes to remains constant at a given temperature, independent of scaling (wire dimensions).”