Heterogeneously integrated III–V/Si MOS capacitor Mach–Zehnder modulator

By T. Hiraki, T. Aihara, K. Hasebe, K. Takeda, T. Fujii, T. Kakitsuka, T. Tsuchizawa, H. Fukuda, Shinji Matsuo. Nature Photonics, 2017

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Review of Silicon Photonics Technology and Platform Development (2021, background): “Some approaches use vertical junctions, such as SISCAP (silicon-insulator-silicon capacitors) junctions, with the idea of increasing the junction depletion region that overlaps with the optical mode, albeit at the cost of higher fabrication complexity.”
Graphene-based integrated photonics for next-generation datacom and telecom (2018, methodology): “3b, we compare the FOM of graphene modulators with those of p–n junction Si modulators, Si–insulator–Si modulators[104] (black curve) and InGaAsP membranes on Si (refs[105,106]).”
Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies (2021, background): “But, the electro-optic cut-off frequency is rather limited due to the large oxide capacitance in the carrier accumulation mode of operation.(161,163) One possible approach to break the trade-off between the high-speed operation and high modulation efficiency banks on operating the III–V on Si MOS ph”