ZnO devices: Photodiodes and p-type field-effect transistors

By Y. Ryu, Tae-Seok Lee, J. Lubguban, H. White, Y. S. Park, C. Youn. 2005

162 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a5268996ddcdbc50016e88cf4c450b1806c96094

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Kewei Liu
2. Masakazu Aono
3. Makoto Sakurai

In Electrical and Electronic Engineering

1. Kewei Liu
2. Masakazu Aono
3. Makoto Sakurai
4. Daniele Ielmini
5. Ilia Valov

In Materials Chemistry

1. Kewei Liu
2. Masakazu Aono
3. Makoto Sakurai

Citations in the corpus

• ZnO-Based Ultraviolet Photodetectors (2010, methodology): “The same year, ZnO p-n junctions photodiodes based on As-doped p-type ZnO layers with hole concentrations in the mid-10(17) cm, and on intrinsic n-type ZnO layers with electron concentrations in the mid-10(17) cm were fabricated by hybrid beam deposition (HBD) [49].”