ZnO-Based Ultraviolet Photodetectors

By Kewei Liu, Makoto Sakurai, Masakazu Aono. Italian National Conference on Sensors, 2010

672 citations recorded by the source corpus.

Ultraviolet (UV) photodetection has drawn a great deal of attention in recent years due to a wide range of civil and military applications. Because of its wide band gap, low cost, strong radiation hardness and high chemical stability, ZnO are regarded as one of the most promising candidates for UV photodetectors. Additionally, doping in ZnO with Mg elements can adjust the bandgap largely and make it feasible to prepare UV photodetectors with different cut-off wavelengths. ZnO-based photoconductors, Schottky photodiodes, metal–semiconductor–metal photodiodes and p–n junction photodetectors have been developed. In this work, it mainly focuses on the ZnO and ZnMgO films photodetectors. We analyze the performance of ZnO-based photodetectors, discussing recent achievements, and comparing the characteristics of the various photodetector structures developed to date.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/1754c1c221c100b4d44989895ef2c5542baf2db0

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Citations in the corpus

Skin-inspired highly stretchable and conformable matrix networks for multifunctional sensing (2018, methodology): “ZnO-based metal – semiconductor – metal sensors were integrated into the network, because ZnO is regarded as one of the most promising candidates for UV photodetection 52 .”
Ultraviolet Detectors Based on Wide Bandgap Semiconductor Nanowire: A Review (2018, background): “Those common schematic structures are shown in Figure 3 [31,32].”