A spin metal–oxide–semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain

By S. Sugahara, M. Tanaka. 2003

391 citations recorded by the source corpus.

We propose and theoretically analyze a metal–oxide–semiconductor field-effect-transistor (MOSFET) type of spin transistor (spin MOSFET) consisting of a MOS structure and half-metallic-ferromagnet (HMF) contacts for the source and drain. When the magnetization configuration of the HMF source and drain is parallel (antiparallel), highly spin-polarized carriers injected from the HMF source to the channel are transported into (blocked by) the HMF drain, resulting in the magnetization-configuration-dependent output characteristics. Our two-dimensional numerical analysis indicates that the spin MOSFET exhibits high (low) current drive capability in the parallel (antiparallel) magnetization, and that extremely large magnetocurrent ratios can be obtained. Furthermore, the spin MOSFET satisfies other important requirements for “spintronic integrated circuits,” such as high amplification capability, low power-delay product, and low off-current.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/a3e65c37a8ec7c4b2cd7c04de1da5006ee341d37

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

Citations in the corpus

Proposal of a Spin Torque Majority Gate Logic (2010, background): “Some of the devices belong to the class with electric inputs and outputs but have a spin degree of freedom involved in their operation: the Datta-Das spin modulator [4], the spin field-effect transistor [ 5 ], and the magnetic-tunnel-junction-based logic [6]‐[9].”
Overview of Beyond-CMOS Devices and a Uniform Methodology for Their Benchmarking (2013, background): “13) [24] combines a MOSFET and a switchable magnetic element.”
Spintronics (2015, background): “…Johnson 1993], but was experimentally developed recently, thanks to the rapid progress of ferromagnetic study on spin-orbit interaction, and since then a wide variety of spin transistors based on various operating principles have been proposed [Schliemann et al. 2003; Sugahara and Tanaka 2004].”