Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers
By L. Goux, J. Lisoni, M. Jurczak, D. Wouters, L. Courtade, C. Muller. 2010
186 citations recorded by the source corpus.
Subfields: Cellular and Molecular Neuroscience, Electrical and Electronic Engineering, Polymers and Plastics
View Paper: https://www.semanticscholar.org/paper/a18790ebcf8ef3a760d8b5b3dbcc138966fffb13
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
- Yangyin Chen
- S. Clima
- B. Govoreanu
- Robin Degraeve
- L. Goux
- G. S. Kar
- A. Fantini
- Guido Groeseneken
Citations in the corpus
- Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM (2013, background): “The switching mechanism was proposed as the drift of related defects (oxygen vacancies (Vo) or anionic species) that are formed by a chemical reaction between HfO2 and oxygen-scavenging cap metals during processing and FORMING operation [5]–[9].”
- Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors (2012, background): “TiO2) can be used for both types of devices, and in fact individual devices have been observed to display both types of switching phenomena [7, 8].”
- Thermochemical resistive switching: materials, mechanisms, and scaling projections (2011, unknown): “Reports exist for Pt/TiO 2 /Pt 67 , 68 and, more recently, for NiO 69 and HfO 2 70 .”