UV-detector based on pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO/n-ZnO

By H. Ohta, M. Kamiya, T. Kamiya, M. Hirano, Hideo Hosono. 2003

214 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a0793fbf95391365571513972dcd0af3006ee701

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Kewei Liu
2. W. Park
3. Masakazu Aono
4. Chunrui Wang
5. Makoto Sakurai
6. G. Yi
7. Daniele Ielmini
8. Ilia Valov

In Electronic, Optical and Magnetic Materials

1. Chunrui Wang
2. W. Park
3. G. Yi
4. Kewei Liu
5. Masakazu Aono
6. Makoto Sakurai

In Materials Chemistry

1. Chunrui Wang
2. W. Park
3. G. Yi
4. Kewei Liu
5. Masakazu Aono
6. Makoto Sakurai

Citations in the corpus

• ZnO nanorods: synthesis, characterization and applications (2005, background): “For example, recently, a wide variety of nanodevices including ultraviolet photodetectors [26, 78, 109–111], sensors [102, 112, 113], field effect transistors [27], intramolecular p–n junction diodes [114], Schottky diodes [115] and light emitting device arrays [116] have been fabricated utilizing Z”
• ZnO-Based Ultraviolet Photodetectors (2010, methodology): “Ohta et al. found that efficient UV-response for n-ZnO/p-NiO photodiode was observed up to ~0.3 A/W at 360 nm (−6 V biased) [53,54].”