Hybrid silicon evanescent devices
By A. Fang, Hyundai Park, Y. Kuo, Richard Jones, O. Cohen, Di Liang, O. Raday, M. Sysak, Mario Paniccia, John E. Bowers. 2007
155 citations recorded by the source corpus.
Si photonics as an integration platform has recently been a focus of optoelectronics research because of the promise of low-cost manufacturing based on the ubiquitous electronics fabrication infrastructure. The key challenge for Si photonic systems is the realization of compact, electrically driven optical gain elements. We review our recent developments in hybrid Si evanescent devices. We have demonstrated electrically pumped lasers, amplifiers, and photodetectors that can provide a low-cost, scalable solution for hybrid integration on a Si platform by using a novel hybrid waveguide architecture, consisting of III-V quantum wells bonded to Si waveguides.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/9e989bb349954f317fc6b50edd942baa4f64bdca
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In Electrical and Electronic Engineering
- Po Dong
- D. van Thourhout
- R. Baets
- John E. Bowers
- Gunther Roelkens
- Di Liang
- D. Thomson
- Frederic Y. Gardes
Citations in the corpus
- Hybrid III--V on Silicon Lasers for Photonic Integrated Circuits on Silicon (2014, methodology): “This situation has propel led research on heterogeneous integration of III-V semiconductors w ith silicon through wafer bonding techniques [6-17] .”
- Hybrid Integrated Platforms for Silicon Photonics (2010, background): “For more detail information on these platforms please see references [5,6].”
- Low-Threshold Heterogeneously Integrated InP/SOI Lasers With a Double Adiabatic Taper Coupler (2012, methodology): “V dies on SOI using an intermediate low index bonding layer [7].”
- Silicon photonic devices and integrated circuits (2014, methodology): “A hybrid laser fabricated by wafer bonding between III and V wafers and silicon-on-insulator (SOI) wafers [2] may be a silicon photonic device only if the bonding technique used allows the full-wafer processing in the following fabrication steps.”