Fast phase transitions induced by picosecond electrical pulses on phase change memory cells

By Weijie Wang, Luping P. Shi, R. Zhao, K. Lim, Hwee Kuan Lee, Tow Chong Chong, Yihong Wu. 2008

170 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/97a659e5771be5da6a896eb90b562a4fdfbc4dbc

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Matthew J. Breitwisch
2. Simone Raoux

In Materials Chemistry

1. A. Padilla
2. Michele M. Franceschini
3. B. Jackson
4. Bülent N. Kurdi
5. Matthew J. Breitwisch
6. Rohit S. Shenoy
7. Simone Raoux
8. Kailash Gopalakrishnan

Citations in the corpus

• Phase change memory technology (2010, background): “These steps are each quite fast: electrical pulses as short as 400 picoseconds have been used to switch Ge2Sb2Te5 into the amorphous state[33].”
• Phase Change Materials (2009, background): “In contrast, in PCRAM devices the switching time is remarkably reduced as device dimensions shrink (60).”