High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform

By Jifeng Liu, Jürgen Michel, W. Giziewicz, D. Pan, K. Wada, D. D. Cannon, S. Jongthammanurak, D. T. Danielson, Lionel C. Kimerling, Jian Chen and 3 more. 2005

220 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/935336b2144c9f776d620ed56cf696ccf786f61d

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Xiaochen Sun
2. Phaedon Avouris
3. Jifeng Liu
4. Lionel C. Kimerling
5. M. Freitag
6. Steven J. Koester

In Materials Chemistry

1. M. Freitag
2. Phaedon Avouris
3. Steven J. Koester
4. Joerg Appenzeller
5. Shinji Yamashita
6. Frank Schwierz
7. Yu-ming Lin
8. Joachim Knoch

Citations in the corpus

• Toward a Germanium Laser for Integrated Silicon Photonics (2010, background): “strained epitaxial germanium films have been grown as an active medium in photodetectors with improved performance in the telecommunication wavelength bands [18], [19].”
• Germanium-on-SOI Infrared Detectors for Integrated Photonic Applications (2006, background): “strain effects that can improve absorption at longer wavelengths [54], alternative geometries may still have to be utilized for optimal operation at 1550 nm.”
• Graphene Photonics, Plasmonics, and Optoelectronics (2014, background): “tors [101] and with a much smaller footprint than ion-implanted Si detectors [102].”